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TPW4R008NH

Toshiba
Part Number TPW4R008NH
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Mar 11, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPW4R008NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • ...
Datasheet PDF File TPW4R008NH PDF File

TPW4R008NH
TPW4R008NH

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPW4R008NH 1.
Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.
) (3) Low drain-source on-resistance: RDS(ON) = 3.
3 mΩ (typ.
) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (5) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1.
0 mA) 3.
Packaging and Internal Circuit TPW4R008NH DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-09 2019-10-21 Rev.
4.
0 TPW4R008NH 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 80 V VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) ID (Bottom drain) 116 A Drain current (pulsed) (t = 100 µs) (Note 1) IDP 440 A Power dissipation (Tc = 25 ) (Bottom drain) PD 142 W Power dissipation Power dissipation (Note 3) PD (Note 4) PD 2.
5 W 0.
8 W Single-pulse avalanche energy (Note 5) EAS 125 mJ Single-pulse avalanche current Channel temperature (Note 5) IAS Tch 116 A 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Bottom drain (Tc = 25 ...


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