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IPB90N06S4-04

Infineon Technologies
Part Number IPB90N06S4-04
Manufacturer Infineon Technologies
Description Power Transistor
Published Mar 11, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
Datasheet PDF File IPB90N06S4-04 PDF File

IPB90N06S4-04
IPB90N06S4-04

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 Product Summary V DS R DS(on),max (SMD version) ID 60 V 3.
7 mΩ 90 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB90N06S4-04 IPI90N06S4-04 IPP90N06S4-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0604 4N0604 4N0604 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=45A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 90 90 360 331 90 ±20 150 -55 .
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+175 55/175/56 Unit A mJ ...


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