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K20A60U

Toshiba
Part Number K20A60U
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Mar 12, 2015
Detailed Description TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Application...
Datasheet PDF File K20A60U PDF File

K20A60U
K20A60U

Overview
TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
165 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol V...


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