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IRF1018ESLPbF

International Rectifier
Part Number IRF1018ESLPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 13, 2015
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet PDF File IRF1018ESLPbF PDF File

IRF1018ESLPbF
IRF1018ESLPbF

Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97125 IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ.
7.
1m: G max.
8.
4m: S ID 79A D DS G TO-220AB IRF1018EPbF G Gate D D DS G D2Pak IRF1018ESPbF DS G TO-262 IRF1018ESLPbF D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt TJ TSTG Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw k Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy f Thermal Resistance Symbol Parameter RθJC RθCS RθJA RθJA www.
irf.
com Junction-to-Case j Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 j Junction-to-Ambient (PCB Mount) , D2Pak ij Max.
79 56 315 110 0.
76 ± 20 21 -55 to + 175 300 10lbxin (1.
1Nxm) 88 47 11 Typ.
––– 0.
50 ––– ––– Max.
1.
32 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 2/28/08 IRF1018E/S/SLPbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current 60 ––– ––– ––– 0.
073 ––– ––– 7.
1 8.
4 2.
0 ––– 4.
0 ––– ––– 20 V VGS = 0V, ID = 250μA V/°C Reference to 25°C...


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