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APM3055L

ANPEC

N-Channel MOSFET

APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS R...


APM3055L

ANPEC


Octopart Stock #: O-909500

Findchips Stock #: 909500-F

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Description
APM3055L N-Channel Enhancement Mode MOSFET Features Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V • Super High Dense Cell Design • High Power and Current Handling Capability • TO-252 and SOT-223 Packages Applications • Switching Regulators • Switching Converters 123 GD S Top View of TO-252 1
More View 23 G DS Top View of SOT-223 Ordering and Marking Information APM3055L AP M 3055L U /V : APM3055L XXXXX H andling C ode Temp. Range Package Code Package Code U : TO -252 V : SO T-223 O peration Junction Tem p. Range C : -55 to 150° C H andling C ode TR : Tape & Reel XXXXX - Date Code Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol VDSS VGSS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed Rating 30 ±20 15 30 Unit V A ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 1 www.anpec.com.tw APM3055L Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol PD Parameter Maximum Power Dissipation TA=25°C TA=100°C TJ Maximum Junction Temperature TSTG Storage Temperature Range TO-252 SOT-223 TO-252 SOT-223 Rating 50 3 20 1.2 150 -55 to 150 Unit W °C °C Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Static BVDSS IDSS VGS(th) IGSS RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VSD Diode Forward Voltage Dynamic Qg Qgs Qgd tON td(ON) tr td(OFF) tf tOFF Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Time Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-off Time Test Condition VGS=0V, ID=250µA VDS=24V, VGS=0V VDS=VGS, ID=250µA VGS=±20V, VDS=0V VGS=10V, ID=12A VGS=4.5V, ID=6A IS=6A, VGS=0V VDS=15V, VGS=10V, ID=2A VDD=15V, ID=2A, VGS=10V, RG=6Ω APM3055L Unit Min. Typ. Max. 30 V 1 µA 1 3V ±100 nA 75 100 100 200 mΩ 0.6 1.3 V 8.5 12 1.1 nC 1.8 40 11 17 ns 37 20 60 Copyright  ANPEC Electronics Corp. Rev. A.6 - Apr., 2002 2 www.anpec.com.tw APM3055L Typical Characteristics IDS- Drain Current(A) GS(th)V (V) Output Characteristics 25 VGS = 10, 9, 8, 7, 6V 20 VGS = 5V 15 V = 4V GS 10 5 VGS = 3V 0 01234 VDS- Drain-to-Source Voltage (V) Threshold Voltage v.s.TJ 1.6 1.5 IDS =250µA 1.4 1.3 1.2 1.1 1.0 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature(oC) 170 160 150 140 130 120 110 100 90 80 70 3 On-Resistance v.s. Gate to Source Voltage ID=10A 45678 V - Gate Voltage (V) GS 9 RDS(ON)- On-Resistance (m Ω) RDS(ON)- On-Resistance (Ω) (No






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