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D5NK50Z

STMicroelectronics
Part Number D5NK50Z
Manufacturer STMicroelectronics
Description STD5NK50Z
Published Mar 19, 2015
Detailed Description STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Powe...
Datasheet PDF File D5NK50Z PDF File

D5NK50Z
D5NK50Z

Overview
STB5NK50Z-1, STD5NK50ZT4, STP5NK50Z STP5NK50ZFP, STU5NK50Z Datasheet N-channel 500 V, 1.
22 Ω typ.
, 4.
4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages TAB I2PAK 1 2 3 TAB 23 1 DPAK TAB 3 2 TO-220 1 3 12 TO-220FP TAB 3 IPAK 1 2 D(2, TAB) G(1) S(3) AM01475V1 Product status link STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z STP5NK50ZFP STU5NK50Z Features Order codes VDS RDS(on) max.
STB5NK50Z-1 STD5NK50ZT4 STP5NK50Z 500 V 1.
5 Ω STP5NK50ZFP STU5NK50Z • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected ID 4.
4 A Package I2PAK DPAK TO-220 TO-220FP IPAK Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.
In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
DS2834 - Rev 6 - September 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C ESD Gate-source human body model (R = 1.
5 kΩ, C = 100 pF) VISO Insulation withstand voltage (RMS) from all three leads to external heat-sink (t = 1 s, TC = 25 °C) dv/dt (3) Peak diode recovery voltage slope Tj Operating junction temperature range Tstg Storage temperature range 1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area.
3.
ISD ≤ 4.
4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS.
Value I2PAK, DPAK, TO-220, IPAK ...


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