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MDD5N50

MagnaChip
Part Number MDD5N50
Manufacturer MagnaChip
Description N-Channel MOSFET
Published Mar 20, 2015
Detailed Description MDD5N50 N-Channel MOSFET 500V MDD5N50 N-Channel MOSFET 500V, 4.4 A, 1.4Ω General Description The MDD5N50 uses advanced...
Datasheet PDF File MDD5N50 PDF File

MDD5N50
MDD5N50

Overview
MDD5N50 N-Channel MOSFET 500V MDD5N50 N-Channel MOSFET 500V, 4.
4 A, 1.
4Ω General Description The MDD5N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDD5N50 is suitable device for SMPS, Ballast and general purpose applications.
Features  VDS = 500V  ID = 4.
4A  RDS(ON) ≤ 1.
4Ω @VGS = 10V @VGS = 10V Applications  Power Supply  PFC  Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 4.
4 2.
8 17.
6 70 0.
56 4.
5 230 -55~150 Unit V V A A A W W/ oC...


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