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LM9013H

ON Semiconductor
Part Number LM9013H
Manufacturer ON Semiconductor
Description Amplifier Transistors
Published Mar 20, 2015
Detailed Description LM9013G, LM9013H Preferred Devices Amplifier Transistors NPN Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Ra...
Datasheet PDF File LM9013H PDF File

LM9013H
LM9013H

Overview
LM9013G, LM9013H Preferred Devices Amplifier Transistors NPN Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 25 25 3.
0 1000 Vdc Vdc Vdc mAdc 625 mW 5.
0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 1.
5 12 –55 to +150 Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, (Note 1.
) Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.
3 °C/W 1.
RqJA is measured with the device soldered into a typical printed circuit board.
http://onsemi.
com COLLECTOR 3 2 BASE 1 EMITTER 1 23 TO–92 CASE 29 STYLE 1 LM90 13x YWW © Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev.
0 LM9013x = Specific Device Code x = G or H Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping LM9013G TO–92 5000 Units/Box LM9013H TO–92 5000 Units/Box Preferred devices are recommended choices for future use and best overall value.
1 Publication Order Number: LM9013G/D LM9013G, LM9013H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 16 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 1.
0 Vdc) LM9013G LM9013H Collector–Emitter Saturation Voltage (IC = 250 mAdc, IB = 25 mAdc) Symbol Min V(BR)CEO V(BR)CBO V(BR)EBO ICBO 25 25 3.
0 – hFE VCE(sat) 118 144 – Max Unit Vdc – Vdc – Vdc – µAdc 0.
5 – 166 202 Vdc 1.
0 http://onsemi.
com 2 A R SEATING PLANE B P L K XX H V G C 1 N N LM9013G, LM9013H PACKAGE DIMENSIONS TO–92 (TO–...


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