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CES388

Part Number	CES388
Manufacturer	Toshiba
Description	Schottky Barrier Diode
Published	Mar 22, 2015
Detailed Description	Schottky Barrier Diode Silicon Epitaxial CES388 1. Applications • High-Speed Switching 2. Features (1) Low forward volta...
Datasheet	CES388 PDF File

Overview

Schottky Barrier Diode Silicon Epitaxial CES388 1.
Applications • High-Speed Switching 2.
Features (1) Low forward voltage : VF(3) = 0.
54 V (typ).
(2) Low reverse current : IR(1) = 1 µA (max).
(3) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages.
3.
Packaging and Internal Circuit CES388 1: Cathode 2: Anode ESC 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Peak reverse voltage Reverse voltage VRM VR 45 V 40 Peak forward current Average rectified current Non-repetitive peak forward surge current Power dissipation Junction temperature IFM IO IFSM PD Tj  (Note 1) (Note 2) 300 100 1 150 125 ...

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