DatasheetsPDF.com

MRF19085LSR3

Part Number	MRF19085LSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Mar 23, 2015
Detailed Description	ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - C...
Datasheet	MRF19085LSR3 PDF File

Overview

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2 - Carrier N - CDMA Performance IISDQ- 9=58C5D0MmAA,(PPioloutt,=S1y8ncW, PatatsginAgv,gT.
,rfa1ff=ic 1fo9r6V0DMDH=z2, 6f2V=ol1ts9,62.
5 Codes 8 Through 13) MHz 1.
2288 MHz Channel Bandwidth Carrier.
Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz.
Distortion Products Measured over 1.
2288 MHz Bandwidth at f1 - 2.
5 MHz and f2 +2.
5 MHz.
Peak/Avg.
= 9.
8 dB @ 0.
01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 13.
0 dB Efficiency — 23% ACPR — - 51 dB IM3 — - 36.
5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Document Number: MRF19085 Rev.
8, 5/2006 MRF19085LR3 MRF19085LSR3 1930 - 1990 MHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF19085LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF19085LSR3 Table 1.
Maximum Ratings Rating Symbol Value Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2.
Thermal Characteristics VDSS VGS PD Tstg TC TJ - 0.
5, +65 - 0.
5, +15 273 1.
56 - 65 to +150 150 200 Characteristic Symbol Value (1) Ther...

Similar Datasheet

MRF19085LSR3 RF Power Field Effect Transistors - Motorola
MRF19085LSR3 RF Power Field Effect Transistors - Freescale Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)