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HFP3N80

SemiHow
Part Number HFP3N80
Manufacturer SemiHow
Description 800V N-Channel MOSFET
Published Mar 23, 2015
Detailed Description HFP3N80 Dec 2005 HFP3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.0 Ω ID = 3.0 A FEATURES  Originative N...
Datasheet PDF File HFP3N80 PDF File

HFP3N80
HFP3N80

Overview
HFP3N80 Dec 2005 HFP3N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 4.
0 Ω ID = 3.
0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 17 nC (Typ.
)  Extended Safe Operating Area  Lower RDS(ON) : 4.
0 Ω (Typ.
) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 800 3.
0 1.
9 12 ±30 320 3.
0 10.
7 4.
5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 107 0.
85 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθCS RθJA Junction-to-Case Parameter Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -- Max.
1.
17 -62.
5 Units ℃/W ◎ SEMIHOW REV.
A0,Dec 2005 HFP3N80 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 1.
5 A 2.
5 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 800 V, VGS = 0 V VDS = 640 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 800 ----- -- ...


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