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FTU220

IPS
Part Number FTU220
Manufacturer IPS
Description N-Channel MOSFET
Published Mar 25, 2015
Detailed Description FTD220 FTU220 N-Channel MOSFET Applications: • CRT / TV Monitor • Telecom • Datacom Features: • RoHS Compliant • Low ON...
Datasheet PDF File FTU220 PDF File

FTU220
FTU220

Overview
FTD220 FTU220 N-Channel MOSFET Applications: • CRT / TV Monitor • Telecom • Datacom Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve • Inductive Switching Curves Ordering Information PART NUMBER FTD220 FTU220 PACKAGE TO-252 TO-251 BRAND FTD220 FTU220 Pb Lead Free Package and Finish VDSS 200V RDS(ON) (Max.
) 0.
60 Ω ID 6.
0A D G S TO-252 G D S Packages Not to Scale G TO-251 D S Absolute Maximum Ratings TC=25 oC unless otherwise specified Symbol Parameter Maximum Units VDSS ID ID@ 100 oC IDM PD VGS EAS IAS dv/dt Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 oC Gate-to-Source Voltage Single Pulse Avalanche Engergy L=10 mH, ID=3.
9 Amps Pulsed Avalanche Rating Peak Diode Recovery dv/dt (NOTE *1) (NOTE *2) (NOTE *3) 200 6.
0 Figure 3 Figure 6 48 0.
38 ± 30 75 Figure 8 3.
0 V A W W/ oC V mJ V/ ns TL TPKG TJ and TSTG Maximum Temperature for Soldering Leads at 0.
063in (1.
6mm) from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range 300 260 -55 to 150 oC Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance Symbol Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ©2007 InPower Semiconductor Co.
, Ltd.
Maximum 2.
5 100 Units oC/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
FTD220 / FTU220 REV.
A.
May 2007 OFF Characteristics TJ=25 oC unless otherwise specified Symbol Parameter Min.
Typ.
BVDSS ∆BVDSS/∆ TJ Drain-to-Source Breakdown Voltage BreakdownVoltage Temperature Coefficient, Figure 11.
200 --- 0.
26 -- -IDSS Drain-to-Source Leakage Current -- -- IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage -- --- -- Max.
--- 25 250 100 -100 Units V V/ o...


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