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FTW20N50A

IPS
Part Number FTW20N50A
Manufacturer IPS
Description N-Channel MOSFET
Published Mar 25, 2015
Detailed Description FTW20N50A General Description˖ FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned pla...
Datasheet PDF File FTW20N50A PDF File

FTW20N50A
FTW20N50A

Overview
FTW20N50A General Description˖ FTW20N50A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-3P(N), which accords with the RoHS standard.
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Features˖ z Fast Switching z Low ON Resistance(RdsoQİŸ z Low Gate Charge (Typical Data:130nC) z Low Reverse transfer capacitances(Typical:65pF) z 100% Single Pulse avalanche energy Test Applications˖ Power switch circuit of electron ballast and adaptor.
Absolute˄Tc= 25ć unless oth...


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