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CRE8N80

Part Number	CRE8N80
Manufacturer	CRE
Description	N-Channel MOSFET
Published	Mar 29, 2015
Detailed Description	7.8 Amps，800Volts N-Channel MOSFET ■ Description The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is d...
Datasheet	CRE8N80 PDF File

Overview

7.
8 Amps，800Volts N-Channel MOSFET ■ Description The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
■ Features � RDS(ON) = 1.
75 Ω@VGS = 10 V � Low gate charge ( typical 27nC) � High ruggedness � Fast switching capability � Avalanche energy specified � Improved dv/dt capability ■ Symbol CFF/P8N80 ■ Ordering Information Order Number Normal Lead Free Plating HX8N80(C)-TA3-T HX8N80(C)L-TA3-T HX8N80(C)-TF3-T HX8N80(C)L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source HX8N80(C)L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating Package TO-220 TO-220F Pin Assignment 123 GD S GD S Packing Tube Tube (1)T:Tube,R:Tape Reel (2)TA3:TO-220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Symbol Ratings TO-220 TO-220F Drain-Source Voltage VDSS 800 Gate-Source Voltage Drain Currenet Continuous Tc=25℃ Tc=100℃ Drain Current Pulsed (Note 1) VGSS ID IDP 7.
8 4.
5 26.
4 ±30 7.
8＊ 4.
5＊ 26.
4＊ Avalanche Energy Repetitive (Note 1) Single Pulse (Note 2) EAR EAS 6.
6 580 Peak Diode Recovery dv/dt (Note 3) dv/dt 4.
5 Total Power Dissipation Tc=25℃ Derate above 25℃ PD 167 56 1.
33 0.
44 Junction Temperature TJ +150 TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO.
, LTD Units V V A A A mJ mJ V/ns W W/℃ ℃ 1 Storage Temperature ＊Drain current limited by maximum junction temperature.
■ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case CFF/P8N80 TSTG -55~+150 ℃ Symbol RthJA RthCS RthJC Ratings TO-220 TO-220F 62.
5 0.
5 -- 0.
75 2.
25 Units ℃/W ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.
） Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage...

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