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HX5N90

TIANJIN HUANXIN TECHNOLOGY
Part Number HX5N90
Manufacturer TIANJIN HUANXIN TECHNOLOGY
Description N-Channel MOSFET
Published Mar 29, 2015
Detailed Description HX5N90 5.4 Amps，900Volts N-Channel MOSFET ■ Description The HX5N90 N-Channel enhancement mode silicon gate power MOSFET ...
Datasheet PDF File HX5N90 PDF File

HX5N90
HX5N90

Overview
HX5N90 5.
4 Amps，900Volts N-Channel MOSFET ■ Description The HX5N90 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
■ Features z RDS(ON) = 2.
3Ω@VGS = 10 V z Low gate charge ( typical 31nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability ■ Symbol Power MOSFET ■ Ordering Information Order Number Normal Lead Free Plating HX5N90-TA3-T HX5N90L-TA3-T HX5N90-TF3-T HX5N90L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source Package TO-220 TO-220F Pin Assignment 123 GDS GDS HX5N90L-TA3-T (1)T:Tube,R:Tape Reel （1）Packing Type （2）Package Type （3）Lead Plating (2)TA3:TO-220,TF3:TO-220F (3)L:Lead Free Plating Blank：Pb/Sn ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Symbol Ratings TO-220 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Tc=25℃ Tc=100℃ (Note 1) VDSS VGSS ID IDP 900 ±30 5.
4 3.
0＊ 3.
42 1.
9 21.
6 12.
0＊ Avalanche Energy Peak Diode Recovery dv/dt Repetitive (Note 1) Single Pulse (Note 2) (Note 3) EAR EAS dv/dt 15.
8 660 4.
0 5.
1 Total Power Dissipation Tc=25℃ Derate above 25℃ PD 158 51 1.
27 0.
41 Junction Temperature TJ +150 Storage Temperature ＊Drain current limited by maximum junction temperature.
TSTG -55~+150 Packing Tube Tube Units V V A A A mJ mJ V/ns W W/℃ ℃ ℃ TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO.
, LTD 1 HX5N90 ■ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case Power MOSFET Symbol RthJA RthCS RthJC Ratings TO-220 TO-220F 62.
5 0.
5 -- 0.
79 2.
45 Units ℃/W ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.
） Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leak...


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