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HX8205A

Part Number	HX8205A
Manufacturer	Husintent
Description	Dual N-Channel Enhancement Mode Power MOSFET
Published	Mar 29, 2015
Detailed Description	HX8205A Dual N-Channel Enhancement Mode Power MOSFET Description The HX8205A uses advanced trench technology to provid...
Datasheet	HX8205A PDF File

Overview

HX8205A Dual N-Channel Enhancement Mode Power MOSFET Description The HX8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
General Features ● VDS = 19.
5V,ID = 6A RDS(ON) <37mΩ @ VGS=2.
5V RDS(ON) < 27mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management D1 D2 G1 G2 S1 S2 Schematic diagram Marking and pin Assignment TSSOP-8 top view Package Marking And Ordering Information Device Marking Device ...

Similar Datasheet

HX8205 Dual N-Channel Enhancement Mode Power MOSFET - Husintent
HX8205A Dual N-Channel Enhancement Mode Power MOSFET - Husintent

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