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DG7N60

DGME
Part Number DG7N60
Manufacturer DGME
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Published Mar 29, 2015
Detailed Description DG7N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG7N60N，， ，，，。 ，，。 DG7N60 is an N-channel enha...
Datasheet PDF File DG7N60 PDF File

DG7N60
DG7N60

Overview
DG7N60 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.
0 General Description DG7N60N，， ，，，。 ，，。 DG7N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 7 1.
3 16 V A Ω pF Symbol Package 1 /9 ABSOLUTE MAXIMUM RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Continues Drain Current ( 1) Plused Drain Current (note1) Gate-to-Source Voltage (2) Single Pulsed Avalanche Energy (note2) ( 1) Avalanche Current (note1) ( 1) Repetitive Avalanche Energy (note1) (3) Peak Diode Recovery (note3) Power Dissipation Symbol VDSS Tc=25℃ ID Tc=100℃ IDM VGS EAS IAR EAR dv/dt Tc=P2D5℃ TO-220/TO-262 TO-220F Power D...


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