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D1416

INCHANGE
Part Number D1416
Manufacturer INCHANGE
Description Silicon NPN Darlington Power Transistor
Published Mar 31, 2015
Detailed Description INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 DESCRIPTION ·Coll...
Datasheet PDF File D1416 PDF File

D1416
D1416

Overview
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 APPLICATIONS ·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 80 V 5V IC Collector Current-Continuous 7A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1416 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 1.
5 V 2.
0 V 2.
5 V 100 μA IEBO Emitter Cutoff Current hFE -1 DC Current Gain VEB= 5V; IC= 0 IC= 3A; VCE= 3V 2000 3.
0 mA 15000 hFE -2 DC Current Gain IC= 7A; VCE= 3V 1000 Switching times ton Turn-on Time tstg Storage Time tf Fall Time IB1= -IB2= 6mA RL= 15Ω; VCC= 45V PW=20μs; Duty Cycle≤1% 0.
8 μs 3.
0 μs 2.
5 μs isc website：www.
iscsemi.
cn 2 ...


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