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MMG3012NT1

Part Number	MMG3012NT1
Manufacturer	Freescale Semiconductor
Description	Heterojunction Bipolar Transistor
Published	Apr 2, 2015
Detailed Description	Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity...
Datasheet	MMG3012NT1 PDF File

Overview

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched.
It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications.
It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.
Features  Frequency: 0--6000 MHz  P1dB: 18.
5 dBm @ 900 MHz  Small--Signal Gain: 19 dB @ 900 MHz  Third Order Output Intercept Point: 34 dBm @ 900 MHz  Single 5 V Supply  Internally Matched to 50 Ohms  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel.
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Document Number: MMG3012NT1 Rev.
8, 9/2014 MMG3012NT1 0--6000 MHz, 19 dB 18.
5 dBm InGaP HBT GPA SOT--89 Table 1.
Typical Performance (1) Characteristic 900 2140 Symbol MHz MHz Small--Signal Gain (S21) Gp 19 15.
8 Input Return Loss (S11) IRL --18 --20 Output Return Loss (S22) ORL --18 --12 Power Output @1dB Compression P1dB 18.
5 19 Third Order Output Intercept Point OIP3 34 32 1.
VCC = 5 Vdc, TA = 25C, 50 ohm system.
3500 MHz 13.
4 --17 --16 18 31 Unit dB dB dB dBm dBm Table 2.
Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol VCC ICC Pin Tstg TJ Value 7 300 25 --65 to +150 175 Unit V mA dBm C C Table 3.
Thermal Characteristics Characteristic Symbol Value (2) Thermal Resistance, Junction to Case Case Temperature 88C, 5 Vdc, 70 mA, no RF applied RJC 85 2.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.
freescale.
com/rf.
Select Documentation/Application Notes -- AN1955.
Unit C/W  Freescale Semiconductor, Inc.
, 2005--2008, 2012, 2014.
All rights reserved.
RF Device Data Freescale Semiconductor,...

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