DatasheetsPDF.com

SGB20N60

Infineon
Part Number SGB20N60
Manufacturer Infineon
Description Fast S-IGBT in NPT-technology
Published Apr 3, 2015
Detailed Description SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined wit...
Datasheet PDF File SGB20N60 PDF File

SGB20N60
SGB20N60

Overview
SGP20N60 SGB20N60, SGW20N60 Fast S-IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E Type SGP20N60 SGB20N60 SGW20N60 VCE IC VCE(sat) Tj Package 600V 20A 2.
4V 150°C TO-220AB TO-263AB TO-247AC Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 20 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time1) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Symbol VCE IC ICpuls - VGE EAS tSC Ptot Tj , Tstg Or...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)