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HBNP45S6R

CYStech Electronics
Part Number HBNP45S6R
Manufacturer CYStech Electronics
Description General Purpose NPN / PNP Epitaxial Planar Transistors
Published Apr 3, 2015
Detailed Description CYStech Electronics Corp. Spec. No. : C901S6R Issued Date : 2004.04.19 Revised Date : Page No. : 1/6 General Purpose N...
Datasheet PDF File HBNP45S6R PDF File

HBNP45S6R
HBNP45S6R

Overview
CYStech Electronics Corp.
Spec.
No.
: C901S6R Issued Date : 2004.
04.
19 Revised Date : Page No.
: 1/6 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45S6R Features • Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
Equivalent Circuit HBNP45S6R SOT-363R Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits TR1 (NPN) TR2 (PNP) 60 -60 50 -50 7 -6 150 -150 200(total) *1 150 -55~+150 Note: *1 150mW per element must not be exceeded.
Unit V V V mA mW °C °C HBNP45S6R CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C901S6R Issued Date : 2004.
04.
19 Revised Date : Page No.
: 2/6 Characteristics (Ta=25°C) • TR1 (NPN) Symbol Min.
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob 60 50 7 200 80 - • TR2 (PNP) Symbol Min.
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob -60 -50 -6 200 60 - Typ.
0.
2 180 2 Typ.
-0.
25 140 4 Max.
0.
1 0.
1 0.
4 600 3.
5 Max.
-0.
1 -0.
1 -0.
5 600 5 Unit V V V µA µA V MHz pF Test Conditions IC=100µA IC=1mA IE=50µA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=100MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% HBNP45S6R CYStek Product Specification CYStech Electronics Corp.
Characteristic curves • TR1 (NPN) Spec.
No.
: C901S6R Issued Date : 2004.
04.
19 Revised Date : Page No.
: 3/6 Current Gain vs Collector Current Saturation Voltage vs Collector Current 10...


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