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LMUN5335DW1T1

Leshan Radio Company
Part Number LMUN5335DW1T1
Manufacturer Leshan Radio Company
Description Dual Bias Resistor Transistors
Published Apr 6, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic...
Datasheet PDF File LMUN5335DW1T1 PDF File

LMUN5335DW1T1
LMUN5335DW1T1


Overview
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1 Series The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device.
In the LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Pb-Free Package is available MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS V CBO V CEO IC 50 Vdc 50 Vdc 100 mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.
) mW 256 (Note 2.
) 1.
5 (Note 1.
) mW/°C 2.
0 (Note 2.
) Thermal Resistance – Junction-to-Ambient R θJA 670 (Note 1.
) 490 (Note 2.
) °C/W Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C P D 250 (Note 1.
) 385 (Note 2.
) 2.
0 (Note 1.
) 3.
0 (Note 2.
) Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead R θJA R θJL 493 (Note 1.
) 325 (Note 2.
) 188 (Note 1.
) 208 (Note 2.
) Junction and Storage Temperature T J , T stg –55 to +150 1.
FR–4 @ Minimum Pad 2.
FR–4 @ 1.
0 x 1.
0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 5 4 1 2 3 SOT-363/SC-88 6 54 Q2 R1 R2 R2 R1 Q1 12 3 MARKING DIAGRAM 6 54 XX 1 23 xx = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific...



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