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2N03L05

Infineon Technologies
Part Number 2N03L05
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 7, 2015
Detailed Description OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product...
Datasheet PDF File 2N03L05 PDF File

2N03L05
2N03L05

Overview
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO262 -3-1 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Product Summary VDS RDS(on) ID 30 V 5.
2 mΩ 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N03S2L-05 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4033 Q67042-S4032 Q67042-S4093 Marking 2N03L05 2N03L05 2N03L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Value 80 80 320 325 16 6 ±20 167 -55.
.
.
+175 55/175/56 Unit A mJ kV/µs V W °C Page 1 2003-04-24 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 3) SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Symbol Values Unit min.
typ.
max.
RthJC RthJA - 0.
6 0.
9 K/W - - 62 - - 40 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA Gate threshold voltage, VGS = VDS ID=110µA Zero gate voltage drain current VDS=30V, VGS=0V, Tj=25°C VDS=30V, VGS=0V, Tj=125°C Gate-source leakage current VGS=20V, VDS=0V Drain-source on-state resistance VGS=4.
5V, ID=55A VGS=4.
5V, ID=55A, SMD version Drain-source on-state resistance4) VGS=10V, ID=55A VGS=10V, ID=55A, SMD version V(BR)DSS 30 VGS(th) 1.
2 1.
6 -V 2 IDSS IGSS µA - 0.
01 1 - 10 10...


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