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JCS2N60

JILIN SINO-MICROELECTRONICS
Part Number JCS2N60
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Apr 13, 2015
Detailed Description N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package  ...
Datasheet PDF File JCS2N60 PDF File

JCS2N60
JCS2N60

Overview
N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.
0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.
3 nC Package    LED APPLICATIONS  High frequency switching mode power supply  Electronic ballast  LED power supply  CrssB B ( 7.
6pF)    dv/dt RoHS FEATURES Low gate charge Low CrssB B (typical 7.
6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking Package Halogen Free JCS2N60V-O-V-N-B JCS2N60R-O-R-N-B JCS2N60R-O-R-N-A JCS2N60C-O-C-N-B JCS2N60F-O-F-N-B JCS2N60V-R-V-N-B JCS2N60V JCS2N60R JCS2N60R JCS2N60C JCS2N60F JCS2N60V IPAK DPAK DPAK TO-220C TO-220MF IPAK NO NO NO NO NO YES Packaging Tube Tube Reel Tube Tube Tube Device Weight 0.
35 g(typ) 0.
30 g(typ) 0.
30 g(typ) 2.
15 g(typ) 2.
20 g(typ) 0.
35 g(typ) ：201501F 1/12 R ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value JCS2N60V/R JCS2N60C － Drain-Source Voltage VDSSB B 600 Drain Current-continuous IDB T=25℃ B T=100℃ 1.
9 1.
1 2.
0 1.
3 （ 1） Drain Current – pulse IDMB B （note 1） 6.
0 Gate-Source Voltage VGSSB B ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EASB B 120 （ 1） Avalanche Current(note 1) IARB B 2.
0 （ 1） Repetitive Avalanche Energy （note 1） EARB B 5.
4 （ 3） Peak Diode Recovery Dv/dt （note 3） dv/dt 5.
5 Power Dissipation P T =25℃D CB B B B -Derate above 25℃ 44 0.
35 54 0.
43 Operating and Storage T ，TJ STGB B BB Temperature Range -55～+150 Maximum Lead Temperature for TLB B 300 Soldering Purposes * *Drain current limited by maximum junction temperature JCS2N60 JCS2N60F Unit V 2.
0* A 1.
3* A 6.
0* A V mJ A mJ V/ns 23 W 0.
18 W/℃ ℃ ℃ ：201501F 2/12 R ELECTRICAL CHARACTERISTICS JCS2N60 Parameter Off –Characteristics Symbol Tests conditions Min Typ Max Units － Drain-Source Voltage BVDSSB B IBDB=250μA, VBGSB=0V 600 - - V Breakdown Voltage Temperature Coefficient ΔBVBDSSB/Δ TJB B IBDB=1mA, referenced to 25...


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