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JCS2N60T

JILIN SINO-MICROELECTRONICS
Part Number JCS2N60T
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Apr 13, 2015
Detailed Description R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（Vgs=10V） 4.5 Ω Qg 8 nC Package    LED  ...
Datasheet PDF File JCS2N60T PDF File

JCS2N60T
JCS2N60T

Overview
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS ID 2.
0 A VDSS 600 V Rdson（Vgs=10V） 4.
5 Ω Qg 8 nC Package    LED  Crss ( 3.
8pF)    dv/dt RoHS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplie FEATURES Low gate charge Low Crss (typical 3.
8pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS2N60TC-O-T-N-B JCS2N60VC-O-V-N-B JCS2N60RC-O-R-N-B JCS2N60CC-O-C-N-B JCS2N60FC-O-F-N-B JCS2N60FC-O-F2-N -B JCS2N60T JCS2N60V JCS2N60R JCS2N60C JCS2N60F JCS2N60F Package TO-92 IPAK DPAK TO-220C TO-220MF TO-220MF -K2 Halogen Free Packaging NO NO NO NO NO NO Brede Tube Tube Tube Tube Tube Device Weight 0.
22 g(typ) 0.
35 g(typ) 0.
30 g(typ) 2.
15 g(typ) 2.
20 g(typ) 2.
20 g(typ) ：201502D 1/15 R ABSOLUTE RATINGS (Tc=25℃) JCS2N60C Parameter Symbol JCS2N60 VC/RC Value JCS2N60 JCS2N60 CC FC JCS2N60 TC － VDSS Drain-Source Voltage 600 Drain Current-continuous ID T=25℃ T=100℃ 1.
9 1.
1 2.
0 1.
3 2.
0* 1.
3* （ 1） Drain Current – pulse （note 1） IDM 6.
0 6.
0* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 110 （ 1） Avalanche Current （note 1） IAR 1.
9 （ 1） Repetitive Avalanche EAR Current （note 1） 4.
2 （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt 4.
6 Power Dissipation PD TC=25℃ -Derate above 25℃ 44 0.
35 54 23 4 0.
43 0.
18 0.
025 Operating and Storage T ，TJ STGB B -55～+150 Temperature Range * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ：201502D 2/15 R ELECTRICAL CHARACTERISTICS JCS2N60C Parameter Off –Characteristics Symbol Tests conditions Min Typ Max Units － Drain-Source Voltage BVDSS I DB =250μA, B VBGSB=0V 600 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ I DB =1m B A, 25℃ referenced to - 0.
6 - V/℃ Zero Gate Voltage Drain Cur...


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