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IPD50N03S4L-06

Infineon
Part Number IPD50N03S4L-06
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description OptiMOS®-T2 Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak refl...
Datasheet PDF File IPD50N03S4L-06 PDF File

IPD50N03S4L-06
IPD50N03S4L-06


Overview
OptiMOS®-T2 Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD50N03S4L-06 Product Summary V DS R DS(on),max ID 30 V 5.
5 mW 50 A PG-TO252-3-11 Type IPD50N03S4L-06 Package Marking PG-TO252-3-11 4N03L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=50A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 50 50 200 36 50 ±16 56 -55 .
.
.
+175 55/175/56 Unit A mJ A V W °C - Rev.
1.
1 page 1 2010-10-05 Parameter IPD50N03S4L-06 Symbol Conditions min.
Values typ.
Unit max.
Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) - - 2.
7 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=20µA I DSS V DS=30V, V GS=0V, T j=25°C V DS=30V, V GS=0V, T j=125°C2) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.
5V, I D=25A V GS= 10V, I D=50 A 30 - -V 1.
0 1.
5 2.
2 - 0.
1 1 µA - 10 100 - - 100 nA - 6.
9 9.
0 mW - 4.
9 5.
5 Rev.
1.
1 page 2 2010-10-05 Parameter IPD50N03S4L-06 Symbol Conditions min.
Values typ.
Unit max.
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss C oss Crss V GS=0V, V DS=25V, f =1MHz - 1790 2330 pF - 460 600 - 17 34 t d(on) - 3 - ns tr V DD=1...


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