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IPD50N06S4L-12

Infineon
Part Number IPD50N06S4L-12
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow...
Datasheet PDF File IPD50N06S4L-12 PDF File

IPD50N06S4L-12
IPD50N06S4L-12

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD50N06S4L-12 Product Summary V DS R DS(on),max ID 60 V 12 mΩ 50 A PG-TO252-3-11 Type IPD50N06S4L-12 Package Marking PG-TO252-3-11 4N06L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation ...


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