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IPD50P04P4-13

Infineon
Part Number IPD50P04P4-13
Manufacturer Infineon
Description Power Transistor
Published Apr 14, 2015
Detailed Description Type IPD50P04P4-13 OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified...
Datasheet PDF File IPD50P04P4-13 PDF File

IPD50P04P4-13
IPD50P04P4-13

Overview
Type IPD50P04P4-13 OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID -40 V 12.
6 mW -50 A PG-TO252-3-313 Tab 1 3 Gate pin 1 Source pin 3 Type IPD50P04P4-13 Package Marking PG-TO252-3-313 4P0413 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=-25A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Drain pin 2/Tab Value -50 -45 -200 18 -50 ±20 58 -55 .
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+175 55/175/56 Unit A mJ A V W °C Rev.
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