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TC58NVG5D2ELA48

Part Number	TC58NVG5D2ELA48
Manufacturer	Toshiba
Description	32 GBIT (4G x 8 BIT) CMOS NAND E2PROM
Published	Apr 16, 2015
Detailed Description	TOSHIBA CONFIDENTIAL TC58NVG5D2ELA48 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 GBIT (4G × 8...
Datasheet	TC58NVG5D2ELA48 PDF File

Overview

TOSHIBA CONFIDENTIAL TC58NVG5D2ELA48 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM (Multi-Level-Cell) DESCRIPTION The TC58NVG5D2 is a single 3.
3 V 32 Gbit (36,393,025,536 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 4148 blocks.
The device has two 8568-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8568-byte increments.
The Erase operation is implemented in a single block unit (1 Mbytes + 47 Kbytes: 8568 bytes × 128 pages).
The TC58NVG5D2 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.
The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other sys...

Similar Datasheet

TC58NVG5D2ELA48 32 GBIT (4G x 8 BIT) CMOS NAND E2PROM - Toshiba

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