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C3267

Toshiba Semiconductor
Part Number C3267
Manufacturer Toshiba Semiconductor
Description 2SC3267
Published Apr 19, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File C3267 PDF File

C3267
C3267


Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications 2SC3267 Unit: mm · Low saturation voltage: VCE (sat) = 0.
5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20 6 2 0.
5 400 150 -55~150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-e...



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