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2SB1386

KEXIN
Part Number 2SB1386
Manufacturer KEXIN
Description Low Frequency Transistor
Published Apr 25, 2015
Detailed Description SMD Type Low Frequency Transistor 2SB1386 Transistors Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / ...
Datasheet PDF File 2SB1386 PDF File

2SB1386
2SB1386

Overview
SMD Type Low Frequency Transistor 2SB1386 Transistors Features Low VCE(sat).
VCE(sat) = -0.
35V (Typ.
) (IC/IB = -4A / -0.
1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -30 -20 -6 -5 -10 0.
5 150 -55 to +150 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol Testconditons BVCBO IC=-50ìA BVCEO IC=-1mA BVEBO IE=-50ìA ICBO VCB=-20V IEBO VEB=-5V VCE(sat) IC=-4A,IB=-0.
1A hFE VCE=-2V, IC=-0.
5A Cob VCE=-6V, IE=5...


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