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CJF31B

CDIL
Part Number CJF31B
Manufacturer CDIL
Description NPN SILICON PLANAR POWER TRANSISTOR
Published Apr 25, 2015
Detailed Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSIS...
Datasheet PDF File CJF31B PDF File

CJF31B
CJF31B

Overview
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS NPN CJF31 CJF31A CJF31B CJF31C PNP CJF32 CJF32A CJF32B CJF32C TO-220FP Fully Isolated Plastic Package Designed for use in General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - Continuous Peak Base Current Total Power Dissipation @ Tc=25ºC Derate Above 25ºC Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VEBO IC CJF31 CJF32 40 40 IB PD PD Tj,Tstg CJF31A CJF31B CJF32A CJF32B 60 80 60 80 5 3 5 1 40 0.
32 2 0.
016 -65 to +150 CJF31C CJF32C 100 100 UNIT V V V A A A W W/ºC W W/ºC ºC THERMAL RESISTANCE From Junction to Ambient From Junction to Case Rth(j-a) Rth(j-c) 62.
5 3.
125 ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter (sus) Voltage VCEO (sus) * IC=30mA, IB=0 CJF31, CJF32 CJF31A, CJF32A CJF31B, CJF32B CJF31C, CJF32C MIN 40 60 80 100 MAX - ºC/W ºC/W UNIT V V V V Collector Cut off Current Collector Cut off Current Emitter Cut off Current ICEO CJF31/31A, CJF32/32A VCE=30V, IB=0 - 0.
3 mA CJF31B/31C, CJF32B/32C - 0.
3 mA VCE=60V, IB=0 ICES IEBO VCE=Rated VCES, VEB=0 VBE=5V, IC=0 - 200 µA - 1.
0 mA Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR POWER TRANSISTORS ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain hFE * IC=1.
0A, VCE=4V IC=3.
0A, VCE=4V Collector Emitter Saturation Voltage VCE(sat) * IC=3A, IB=375mA Base Emitter on Voltage VBE(on) * IC=3.
0A, VCE=4V DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product ** fT IC=500mA, VCE=10V ftest=1MHz Small Signal Current Gain lhfel * Pulse Test: Pulse Width < 300µs, Duty Cycle <2 % ** fT= Ihfel ftest.
IC=...


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