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NTD70N03R

Part Number	NTD70N03R
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Apr 28, 2015
Detailed Description	NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features •ăPlanar HD3e Process for Fast Switching Performance •ăLow ...
Datasheet	NTD70N03R PDF File

Overview

NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features •ăPlanar HD3e Process for Fast Switching Performance •ăLow RDS(on) to Minimize Conduction Loss •ăLow CISS to Minimize Driver Loss •ăLow Gate Charge •ăPb-Free Packages are Available MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current - Continuous @ TC = 25°C, Chip - Continuous @ TC = 25°C, Limited by Package - Continuous @ TA = 25°C, Limited by Wires - Single Pulse (tp = 10 ms) Thermal Resistance - Junction-to-Ambient ą(Note1) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Thermal Resistance - Junction-to-Ambient ą(Note2) Total Power Dissipation @ TA = 25°C Drain Current - Continuous @ TA = 25°C Operating and Storage Temperature Range VDSS VGS RqJC PD ID ID ID IDM RqJA PD ID RqJA PD ID TJ, Tstg 25 ±20 2.
4 62.
5 Vdc Vdc °C/W W 72.
0 A 62.
8 A 32 A 140 A 80 °C/W 1.
87 W 12.
0 A 110 °C/W 1.
36 10.
0 -55 to 175 W A °C Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 s EAS 71.
7 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
When surface mounted to an FR4 board using 0.
5 sq.
in.
pad size.
2.
When surface mounted to an FR4 board using minimum recommended pad size.
http://onsemi.
com V(BR)DSS 25 V RDS(on) TYP 5.
6 mW ID MAX 72 A N-Channel D G S MARKING DIAGRAMS 4 12 3 DPAK CASE 369AA STYLE 2 4 4 Drain YWW T70 N03G 1 Gate 2 Drain 3 Source 4 Drain YWW T70 N03G 1 2 3 DPAK CASE 369D STYLE 2 12 3 Ga...

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NTD70N03R Power MOSFET - ON Semiconductor

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