DatasheetsPDF.com

MRF8S18210WGHSR3

Part Number	MRF8S18210WGHSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Apr 29, 2015
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev. 0, 4/2012 RF Power Field Effect Transistors...
Datasheet	MRF8S18210WGHSR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S18210WHS Rev.
0, 4/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from1805 MHz to 1995 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• 1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.
=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.
,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.
e9C: dVliBpDpD@in=g03,.
00C1hV%aonltPnsre,olIDbaQb=ility on CCDF.
Frequency 1930 MHz 1960 MHz 1995 MHz Gps (dB) 17.
8 17.
8 18.
1 ηD Output PAR ACPR (%) (dB) (dBc) 29.
2 7.
0 --34.
2 28.
2 7.
0 --34.
4 27.
6 7.
1 --34.
3 • Capable of Handling 1...

Similar Datasheet

MRF8S18210WGHSR3 RF Power Field Effect Transistors - Freescale Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)