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HY5N50FT

HY ELECTRONIC
Part Number HY5N50FT
Manufacturer HY ELECTRONIC
Description 500V / 5A N-Channel Enhancement Mode MOSFET
Published Apr 29, 2015
Detailed Description HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A Features • Low On-...
Datasheet PDF File HY5N50FT PDF File

HY5N50FT
HY5N50FT

Overview
HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.
5W@VGS=10V, ID=2.
5A Features • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 TO-220AB 1 2 3 ITO-220AB 12 3 2 Drain Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY5N50T 5N50T TO-220AB 50PCS/TUBE HY5N50FT 5N50FT ITO-220AB 50PCS/TUBE 1 Gate 3 Source Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol HY5N50T HY5N50FT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS +30 Continuous Drain Current TC=25℃ ID 5 5 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=5A, VDD=95V...


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