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CES520

Toshiba
Part Number CES520
Manufacturer Toshiba
Description Schottky Barrier Diode
Published May 4, 2015
Detailed Description Schottky Barrier Diode Silicon Epitaxial CES520 1. Applications • High-Speed Switching 2. Features (1) Low reverse curre...
Datasheet PDF File CES520 PDF File

CES520
CES520

Overview
Schottky Barrier Diode Silicon Epitaxial CES520 1.
Applications • High-Speed Switching 2.
Features (1) Low reverse current: IR(2) = 5 µA (max) (2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages.
3.
Packaging and Internal Circuit CES520 1: Cathode 2: Anode ESC 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage Peak forward current Average rectified current Non-repetitive peak forward surge current Power dissipation Junction temperature Storage temperature Operating temperature VR IFM IO IFSM PD Tj Tstg Topr    (Note 1) (Note 2)    30 300 200 1 150 125 -55 to 125 -40 to 100 V mA A mW  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Measured with a 10ms pulse.
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Start of commercial production 2010-10 1 2014-04-07 Rev.
4.
0 5.
Electrical Characteristics (Unless otherwise specified, Ta = 25) CES520 Characteristics Forward voltage Reverse current Total capacitance 6.
Marking Symbol Note Test Condition VF(1) VF(2) VF(3) IR(1) IR(2) Ct  IF = 1 mA  IF = 10 mA  IF = 200 mA  VR = 10 V  VR = 30 V  VR = 0 V, f = 1 MHz Min Typ.
Max Unit  0.
21  V  0.
28   0.
52 0.
6   1 µA  5  17  pF Fig.
6.
1 Marking Marking Code RA Part Number CES520 7.
Usage Considerations • Schottky barrier diodes ...


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