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IRGS4056DPbF

International Rectifier
Part Number IRGS4056DPbF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published May 4, 2015
Detailed Description PD - 96197 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Te...
Datasheet PDF File IRGS4056DPbF PDF File

IRGS4056DPbF
IRGS4056DPbF

Overview
PD - 96197 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI IRGS4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ.
= 1.
55V C E C G D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE Collector-to-Emitter Voltage Continuous Collector Current...


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