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SSFP11N40

Good-Ark
Part Number SSFP11N40
Manufacturer Good-Ark
Description Power MOSFET
Published May 7, 2015
Detailed Description SSFP11N40 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirem...
Datasheet PDF File SSFP11N40 PDF File

SSFP11N40
SSFP11N40

Overview
SSFP11N40 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Application ■ Switching application VDSS = 400V ID25 = 11A RDS(ON) = 0.
55Ω Pin1–Gate Pin2–Drain Pin1–Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max.
11.
0 6.
9 44.
0 150 1.
2 ±30 480 11 15 4.
0 –55 to +150 300(1.
6mm from case) 10 Ibf●in(1.
1N●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min.
Typ.
Max.
RθJC Junction-to-case — — 0.
83 RθCS Case-to-Sink,Flat,Greased Surface — 0.
24 — RθJA Junction-to-Ambient — — 40 Units ْC/W 1 SSFP11N40 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min.
Typ.
Max.
Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 400 — — V VGS=0V,ID=250μA △V(BR)DSS/△TJ Breakdown Voltage Temp.
Coefficient — 0.
49 — V/ْC Reference to 25ْC,ID=1mA RDS(on) Static Drain-to-Source On-resistance — — 0.
55 Ω VGS=10V,ID=6.
6A ④ VGS(th) Gate Threshold Voltage 2.
0 — 4.
0 V VDS= 5V,ID=250μA gfs Forward Transconductance 7.
7 — — S VDS=50V,ID=6.
6A IDSS...


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