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SSFP28N10

Good-Ark
Part Number SSFP28N10
Manufacturer Good-Ark
Description Power MOSFET
Published May 7, 2015
Detailed Description SSFP28N10 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirem...
Datasheet PDF File SSFP28N10 PDF File

SSFP28N10
SSFP28N10

Overview
SSFP28N10 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Application ■ Switching application VDSS = 100V ID25 = 28A RDS(ON) = 0.
052Ω Pin1–Gate Pin2–Drain Pin1–Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max.
28 19.
8 110 107 0.
71 ±30 523 28 10.
7 6.
5 –55 to +175 300(1.
6mm from case) 10 Ibf●in(1.
1N●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min.
Typ.
Max.
RθJC Junction-to-case — — 1.
4 RθCS Case-to-Sink,Flat,Greased Surface — 0.
50 — RθJA Junction-to-Ambient — — 62.
5 Units ْC/W 1 SSFP28N10 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min.
Typ.
Max.
Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 — — V VGS=0V,ID=250μA △V(BR)DSS/△TJ Breakdown Voltage Temp.
Coefficient — 0.
11 — V/ْC Reference to 25ْC,ID=250μA RDS(on) VGS(th) Static Drain-to-Source On-resistance — — 0.
052 Ω VGS=10V,ID=14A ④ Gate Threshold Voltage 2.
0 — 4.
0 V VDS=5V,ID=250μA gfs Forward Transconductance — 22.
56 — S VDS=40V,ID=14A IDS...


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