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SSFP9N90

Good-Ark
Part Number SSFP9N90
Manufacturer Good-Ark
Description Power MOSFET
Published May 7, 2015
Detailed Description SSFP9N90 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requireme...
Datasheet PDF File SSFP9N90 PDF File

SSFP9N90
SSFP9N90

Overview
SSFP9N90 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Application ■ Switching application VDSS = 900V ID25 = 8.
0A RDS(ON) = 1.
4Ω Pin1–Gate Pin2–Drain Pin1–Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max.
8.
0 2.
8 32 205 1.
64 ±30 900 8.
0 20.
5 4.
0 –55 to +150 300(1.
6mm from case) 10 Ibf●in(1.
1N●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min.
Typ.
Max.
RθJC Junction-to-case — — 0.
61 RθCS Case-to-Sink,Flat,Greased Surface — 0.
5 － RθJA Junction-to-Ambient — — 62.
5 Units ْC/W 1 SSFP9N90 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min.
Typ.
Max.
Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 900 — — V VGS=0V,ID=250μA △V(BR)DSS/△TJ Breakdown Voltage Temp.
Coefficient — 0.
99 — V/ْC Reference to 25ْC,ID=250μA RDS(on) VGS(th) Static Drain-to-Source On-resistance — 1.
12 1.
4 Ω VGS=10V,ID=4A ④ Gate Threshold Voltage 3.
0 — 5.
0 V VDS=VGS,ID=250μA gfs Forward Transconductance － 9.
2 — S VDS=50V,ID=4A IDSS Dr...


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