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B60NH02L

STMicroelectronics
Part Number B60NH02L
Manufacturer STMicroelectronics
Description STB60NH02L
Published May 9, 2015
Detailed Description STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET TYPE VDSS RDS(on) ID STB60NH02L 24 V < ...
Datasheet PDF File B60NH02L PDF File

B60NH02L
B60NH02L

Overview
STB60NH02L N-CHANNEL 24V - 0.
0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET TYPE VDSS RDS(on) ID STB60NH02L 24 V < 0.
0105 Ω 60 A ■ TYPICAL RDS(on) = 0.
0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.
012 Ω @ 5 V )■ RDS(ON) * Qg INDUSTRY’s BENCHMARK t(s■ CONDUCTION LOSSES REDUCED c■ SWITCHING LOSSES REDUCED u■ LOW THRESHOLD DEVICE rod■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR PIN TAPE & REEL (SUFFIX “T4”) leteDESCRIPTION oThe STB60NH02L utilizes the latest advanced design srules of ST’s proprietary STripFET™ technology.
This is bsuitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
) - OAPPLICATIONS t(s■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES 3 1 D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM te ProducOrdering Information leSALES TYPE oSTB60NH02LT4 MARKING B60NH02L ObsABSOLUTE MAXIMUM RATINGS PACKAGE TO-263 PACKAGING TAPE & REEL Symbol Parameter Value Unit Vspike(1) Drain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 24 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 43 A IDM(2) Drain Current (pulsed) 240 A Ptot Total Dissipation at TC = 25°C 70 W Derating Factor 0.
47 W/°C EAS (3) Single Pulse Avalanche Energy 280 mJ Tstg Storage Temperature Tj Max.
Operating Junction Temperature -55 to 175 °C May 2004 1/11 STB60NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.
14 62.
5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit V(BR)DSS Drain-source Breakdown Voltage ID = 25 mA, VGS = 0 24 V IDSS Zero Gate Voltage VDS = 20 V 1 µA t(s)IGSS Drain Current (VGS = 0) Gate-...


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