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NGTB35N60FL2WG

ON Semiconductor
Part Number NGTB35N60FL2WG
Manufacturer ON Semiconductor
Description IGBT
Published May 11, 2015
Detailed Description NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
Datasheet PDF File NGTB35N60FL2WG PDF File

NGTB35N60FL2WG
NGTB35N60FL2WG

Overview
NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inver...


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