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NGTB30N60IHLWG

ON Semiconductor
Part Number NGTB30N60IHLWG
Manufacturer ON Semiconductor
Description IGBT
Published May 11, 2015
Detailed Description NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS)...
Datasheet PDF File NGTB30N60IHLWG PDF File

NGTB30N60IHLWG
NGTB30N60IHLWG

Overview
NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for half bridge resonant applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Low Saturation Voltage using Trench with Fieldstop Technology • Low Switching Loss Reduces System Power Dissipation • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Inductive Heating • So...


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