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FGA50N100BNT

Fairchild Semiconductor
Part Number FGA50N100BNT
Manufacturer Fairchild Semiconductor
Description 50A NPT-Trench IGBT CO-PAK
Published May 12, 2015
Detailed Description FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK tm Features...
Datasheet PDF File FGA50N100BNT PDF File

FGA50N100BNT
FGA50N100BNT

Overview
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK March 2009 FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK tm Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.
5 V @ IC = 60A • High Input Impedance • RoHS Compliant Applications • UPS, PFC, I-H Jar, Induction Heater, Home Appliance.
General Description Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness.
These devices are well suited for UPS, PFC, I-H Jar, induction Heater and Home Appliance.
GCE TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25oC @ TC = 100oC Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp.
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