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SEMiX151GD066HDs

Part Number	SEMiX151GD066HDs
Manufacturer	Semikron International
Description	IGBT
Published	May 12, 2015
Detailed Description	SEMiX151GD066HDs SEMiX® 13 Trench IGBT Modules SEMiX151GD066HDs Features • Homogeneous Si • Trench = Trenchgate technol...
Datasheet	SEMiX151GD066HDs PDF File

Overview

SEMiX151GD066HDs SEMiX® 13 Trench IGBT Modules SEMiX151GD066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no.
E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICnom ICRM VGES tpsc Tj Tj = 175 °C ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tc = 25 °C Tc = 80 °C Tj = 150 °C Inverse diode IF Tj...

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SEMiX151GD066HDs IGBT - Semikron International

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