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BU3150

Jingdao Electronic
Part Number BU3150
Manufacturer Jingdao Electronic
Description NPN Transistor
Published May 15, 2015
Detailed Description R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU3150 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．AP...
Datasheet PDF File BU3150 PDF File

BU3150
BU3150

Overview
R www.
jdsemi.
cn ShenZhen Jingdao Electronic Co.
,Ltd.
BU3150 Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided power and Switch-mode power supplies 2．FEATURES High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-220A 4．Electrical Characteristics 4.
1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.
2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE* VCE * sat VBE * sat tr tf ts fT VCBO VCEO VEBO IC Ptot Tj Tstg 1100 800 9 3 2 50 150 -55～150 V V V A W ℃ ℃ TEST CONDITION IC=1mA，IE=0 IC=1mA，IB=0 IE=1mA，IC=0 VCB=1100V, IE=0 VCE=800V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=200mA IC=1A, IB=0.
5A IC=1A, IB=0.
5A IC=500mA (UI9600) VCE=10V,IC=100mA, f=1MHz VALUE MIN TYP MAX 1100 800 9 10 20 10 8 15 35 0.
6 1.
5 1.
5 0.
6 2 4.
5 UNIT V V V μA μA μA V V μs μs μs 4 MHz ＊: Pulse test tp≤300μs,δ≤2% Add： 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.
R.
C Tel：0755-29799516 Fax：0755-29799515 1 2013 VBEsat (V) hFE Ptot (W) R www.
jdsemi.
cn ShenZhen Jingdao Electronic Co.
,Ltd.
5.
Characteristic Curve Fig1 SOA（DC） 10 Ta=25℃ 1.
0 50 40 30 BU3150 Bipolar Junction Transistor Fig2 Ptot–T Ptot-Tc IC (A) 0.
1 0.
01 1 10 100 VCE (V) 1000 Fig3 Static Characteristic 1 IB=40mA Ta=25℃ 20 10 Ptot-Ta 0 0 50 100 Tc ( C) Fig4 hFE-IC 150 100...


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