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2MBI200HH-120-50

Fuji Electric

High Speed IGBT

http://www.fujielectric.com/products/semiconductor/ 2MBI200HH-120-50 IGBT Modules HIGH SPEED IGBT MODULE 1200V / 200A...


2MBI200HH-120-50

Fuji Electric


Octopart Stock #: O-918703

Findchips Stock #: 918703-F

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http://www.fujielectric.com/products/semiconductor/ 2MBI200HH-120-50 IGBT Modules HIGH SPEED IGBT MODULE 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Soft-switching Application Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute M
More View aximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Symbols VCES Conditions Gate-Emitter voltage VGES Ic Continuous Collector current Ic pulse 1ms -Ic -Ic pulse Collector Power Dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Screw torque Mounting (*2) Terminals (*3) - 1ms 1 device AC : 1min. Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6) Note *3: Recommendable Value : Terminals 3.5 to 4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Tc=25°C Tc=80°C Tc=25°C Tc=80°C Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-off time Forward on voltage Lead resistance, terminal-chip (*4) Note *4: Biggest internal terminal resistance among arm. Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies toff tf VF (terminal) VF (chip) R lead Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA Tj=25°C VGE = 15V Tj=125°C IC = 200A Tj=25°C Tj=125°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V, IC = 200A VGE = ±15V, RG = 1.6Ω Ls = 20nH Tj=25°C VGE = 0V Tj=125°C IF = 75A Tj=25°C Tj=125°C Thermal resistance characteristics Items Symbols Conditions Thermal resistance (1device) Contact Thermal resistance (1 device) (*5) Rth(j-c) Rth(c-f) IGBT FWD with Thermal Compound Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. Maximum ratings 1200 ±20 300 200 600 400 75 150 1790 +150 -40 ~ +125 2500 3.5 4.5 Units V V A W °C VAC Nm Characteristics min. typ. max. - - 2.0 - - 400 5.7 6.2 6.7 - 3.35 3.65 - 4.25 - 3.10 3.40 - 4.00 - 18 - - 0.30 0.60 0.05 0.20 - 1.85 2.30 - 2.00 - 1.70 2.15 - 1.85 - 1.20 - Units mA nA V V nF µs V mΩ Characteristics min. typ. max. - - 0.07 - - 0.46 - 0.025 - Units °C/W 1 2MBI200HH-120-50 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25oC / chip 500 400 15V 12V VGE=20V 10V 300 Collector current : Ic [ A ] 200 8V 100 0 012345678 Collector-Emitter voltage : VCE [ V ] Collector current : Ic [A ] IGBT Modules http://www.fujielectric.com/products/semiconductor/ Collector current vs. Collector-Emitter voltage (typ.






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