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6MBI100VA-120-50

Fuji Electric
Part Number 6MBI100VA-120-50
Manufacturer Fuji Electric
Description IGBT
Published May 15, 2015
Detailed Description http://www.fujielectric.com/products/semiconductor/ 6MBI100VA-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 100A...
Datasheet PDF File 6MBI100VA-120-50 PDF File

6MBI100VA-120-50
6MBI100VA-120-50


Overview
http://www.
fujielectric.
com/products/semiconductor/ 6MBI100VA-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 100A / 6 in one package Features Compact Package P.
C.
Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Maximum ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Conditions Continuous Tc=100°C Maximum ratings 1200 ±20 100 Units V V Inverter Collector current Icp 1ms Tc=80°C -Ic 200 100 A -Ic pulse 1ms 200 Collector power dissipation Junction temperature Pc 1 device Tj 520 W 175 Operating junciton temperature (under switching conditions) Tjop 150 °C Case temperature Tc Storage temperature Tstg 125 -40 to +125 Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso AC : 1min.
2500 VAC Screw torque Mounting (*3) - M5 3.
5 Nm Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.
5-3.
5 Nm (M5) 1 7174b JULY 2015 6MBI100VA-120-50 IGBT Modules http://www.
fujielectric.
com/products/semiconductor/ Electrical characteristics (at Tj= 25°C unless otherwise specified) Thermistor Inverter Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Resistance B value Symbols Conditions ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Rg (int) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R B VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V...



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