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2MBI200U4B-120-50

Fuji Electric
Part Number 2MBI200U4B-120-50
Manufacturer Fuji Electric
Description IGBT
Published May 16, 2015
Detailed Description SPECIFICATION Device Name Type Name : IGBT MODULE (RoHS compliant product) : 2MBI200U4B-120-50 Spec. No. : MS5F6577 ...
Datasheet PDF File 2MBI200U4B-120-50 PDF File

2MBI200U4B-120-50
2MBI200U4B-120-50

Overview
SPECIFICATION Device Name Type Name : IGBT MODULE (RoHS compliant product) : 2MBI200U4B-120-50 Spec.
No.
: MS5F6577 May.
11 ’06 K.
Muramatsu May.
11 ’06 M.
Watanabe T.
Miyasaka K.
Yamada MS5F6577 1a 14 H04-004-07b Revised Records Date Classification Ind.
May.
-11 -’06 Enactment Content Aug.
-09 -’06 Revision a Revised Reliability test results (P9/14) Applied date Drawn Checked Checked Approved Issued date M.
W atanabe K.
Yamada T.
Miyasaka K.
Muramatsu S.
Ogawa K.
Yamada T.
Miyasaka MS5F6577 2a 14 H04-004-06b 2MBI200U4B-120-50 1.
Outline Drawing ( Unit : mm ) (RoHS compliant product) 2.
Equivalent circuit MS5F6577 3a 14 H04-004-03a 3.
Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified ) Items Sym b o l s Co n d i t i o n s Collector-Emitter voltage Gate-Emitter voltage VCES VGES Ic Continuous Collector current Icp 1ms -Ic -Ic pulse 1ms Collector Power Dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso AC : 1min.
Screw Mounting (*2) Torque Terminals (*2) - (*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.
5 to 3.
5 Nm (M5) Tc=25oC Tc=80oC Tc=25oC Tc=80oC Max i m u m Rat i n g s 1200 ±20 300 200 600 400 200 400 1040 +150 -40 to +125 Units V V A W oC 2500 VAC 3.
5 N m 4.
Electrical characteristics ( at Tj= 25oC unless otherwise specified ) Items Sym b o l s Co n d i t i o n s Ch arac t eri s t i c s min.
typ.
max.
Zero gate voltage collector current ICES VCE=1200V VGE=0V - - 2.
0 Gate-Emitter leakage current IGES VCE=0V VGE=±20V - - 400 Gate-Emitter threshold voltage VGE(th) VCE=20V Ic=200mA 4.
5 6.
5 8.
5 VCE(sat) Ic=200A Tj=25oC - 2.
10 2.
25 Collector-Emitter (terminal) VGE=15V Tj=125oC - 2.
30 - saturation voltage VCE(sat) Tj=25oC - 1.
90 2.
05 (chip) Tj=125oC - 2.
10 - Input capacitance Cies VCE=10V,VGE=0V,f=1MHz - 22 - ton Vcc=600...


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