DatasheetsPDF.com

2MBI600VN-120-50

Fuji Electric
Part Number 2MBI600VN-120-50
Manufacturer Fuji Electric
Description IGBT
Published May 16, 2015
Detailed Description 2MBI600VN-120-50 IGBT MODULE (V series) 1200V / 600A / 2 in one package IGBT Modules Features High speed switching Vol...
Datasheet PDF File 2MBI600VN-120-50 PDF File

2MBI600VN-120-50
2MBI600VN-120-50


Overview
2MBI600VN-120-50 IGBT MODULE (V series) 1200V / 600A / 2 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES Inverter Ic Collector current Ic pulse -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso Screw torque Mounting (*3) Terminals (*4) - Conditions Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C AC : 1min.
Maximum ratings 1200 ±20 600 1200 600 1200 3750 175 150 125 -40 to +125 2500 3.
5 4.
5 Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : Mounting : 2.
5-3.
5 Nm (M5) Note *4: Recommendable value : Terminals : 3.
5-4.
5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Units V V A W °C VAC Nm Thermistor Inverter Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Resistance B value Symbols ICES IGES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R B Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 600mA Tj=25°C Tj=125°C VGE = 15V Tj=150°C IC = 600A Tj=25°C Tj=125°C Tj=150...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)